? semiconductor components industries, llc, 1999 march, 2000 rev. 2 1 publication order number: mac229a8fp/d
silicon bidirectional thyristors designed primarily for industrial and consumer applications for full wave control of ac loads such as appliance controls, heater controls, motor controls, and other power switching applications. ? all diffused and glasspassivated junctions for parameter uniformity and stability ? small, rugged, thermowatt construction for low thermal resistance and high heat dissipation ? center gate geometry for uniform current spreading ? gate triggering guaranteed in four modes ? indicates ul registered e file #e69369 ? device marking: logo, device type, e.g., mac229a8fp, date code maximum ratings (t j = 25 c unless otherwise noted) rating symbol value unit peak repetitive offstate voltage (1) (t j = 40 to 110 c, sine wave 50 to 60 hz, gate open) mac229a8fp mac229a10fp v drm, v rrm 600 800 volts on-state rms current (t c = 80 c) full cycle sine wave 50 to 60 hz i t(rms) 8.0 amps peak nonrepetitive surge current (one full cycle sine wave, 60 hz, t j = 110 c) i tsm 80 amps circuit fusing consideration (t = 8.3 ms) i 2 t 26 a 2 s peak gate current (t 2 m s,t c = 80 c) i gm 2.0 amps peak gate voltage (t 2 m s, t c = 80 c) v gm 10 volts peak gate power (t 2 m s,t c = 80 c) p gm 20 watts average gate power (t c = 80 c, t 8.3 ms) p g(av) 0.5 watt rms isolation voltage (t a = 25 c, relative humidity 20%) () v (iso) 1500 volts operating junction temperature range t j 40 to 110 c storage temperature range t stg 40 to 150 c mounting torque e 8.0 in. lb. (1) v drm and v rrm for all types can be applied on a continuous basis. blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. (2) the case temperature reference point for all tc measurements is a point on the center lead of the package as close as possible to the plastic body. isolated triac 8 amperes rms 600 thru 800 volts device package shipping ordering information mac229a8fp isolated to220fp 500/box http://onsemi.com mt1 g mt2 isolated to220 full pack case 221c style 3 1 2 3 pin assignment 1 2 3 main terminal 2 gate main terminal 1 () mac229a10fp isolated to220fp 500/box
mac229a8fp, mac229a10fp http://onsemi.com 2 thermal characteristics characteristic symbol max unit thermal resistance, junction to case r q jc 2.2 c/w thermal resistance, case to sink r q cs 2.2 c/w thermal resistance, junction to ambient r q ja 60 c/w maximum lead temperature for soldering purposes 1/8 from case for 10 seconds t l 260 c electrical characteristics (t c = 25 c unless otherwise noted; electricals apply in both directions) characteristic symbol min typ max unit off characteristics peak repetitive blocking current (1) (v d = rated v drm , v rrm ; open gate) t j = 25 c t j = 110 c i drm , i rrm e e e e 10 2.0 m a ma on characteristics peak on-state voltage (i tm = 11 a peak, pulse width 2 ms, duty cycle 2%) v tm e e 1.8 volts gate trigger current (continuous dc) (v d = 12 v, r l = 100 w ) mt2(+), g(+); mt2(+), g(); mt2(), g() mt2(), g(+) i gt e e e e 10 20 ma gate tri gger v oltage (continuous dc) (v d = 12 v, r l = 100 w ) mt2(+), g(+); mt2(+), g(); mt2(), g() mt2(), g(+) v gt e e e e 2.0 2.5 volts gate n ontrigger v oltage (continuous dc) (v d = 12 v, t c = 110 c, r l = 100 w ) all four quadrants v gd 0.2 e e volts holding current (v d = 12 vdc, initiating current = 200 ma, gate open) i h e e 15 ma gatecontrolled turnon time (v d = rated v drm , i tm = 16 a peak, i g = 30 ma) t gt e 1.5 e m s dynamic characteristics critical rate of rise of offstate voltage (v d = rated v drm , exponential waveform, t c = 110 c) dv/dt e 25 e v/ m s critical rate of rise of commutation voltage (v d = rated v drm , i tm = 11.3 a, commutating di/dt = 4.1 a/ms, gate unenergized, t c = 80 c) dv/dt(c) e 5.0 e v/ m s (1) ratings apply for open gate conditions. devices shall not be tested with a constant current source for blocking voltage such that the voltage applied exceeds the rated blocking voltage.
mac229a8fp, mac229a10fp http://onsemi.com 3 + current + voltage v tm i h symbol parameter v drm peak repetitive forward off state voltage i drm peak forward blocking current v rrm peak repetitive reverse off state voltage i rrm peak reverse blocking current voltage current characteristic of triacs (bidirectional device) i drm at v drm on state off state i rrm at v rrm quadrant 1 mainterminal 2 + quadrant 3 mainterminal 2 v tm i h v tm maximum on state voltage i h holding current mt1 (+) i gt gate (+) mt2 ref mt1 () i gt gate (+) mt2 ref mt1 (+) i gt gate () mt2 ref mt1 () i gt gate () mt2 ref mt2 negative (negative half cycle) mt2 positive (positive half cycle) + quadrant iii quadrant iv quadrant ii quadrant i quadrant definitions for a triac i gt + i gt all polarities are referenced to mt1. with inphase signals (using standard ac lines) quadrants i and iii are used.
mac229a8fp, mac229a10fp http://onsemi.com 4 i t(rms) , rms onstate current (amp) 6.0 0 104 98 92 5.0 1.0 2.0 3.0 4.0 110 t 7.0 8.0 i t(rms) , rms onstate current (amp) p , case temperature ( c) c 6.0 0 4.0 2.0 0 5.0 1.0 2.0 3.0 4.0 7.0 8.0 , average power (watts) (av) 120 90 60 30 180 120 90 60 = 30 6.0 8.0 10 86 80 dc dc t j 110 c a a a = conduction angle a a a = conduction angle = 180 figure 1. rms current derating figure 2. onstate power dissipation
mac229a8fp, mac229a10fp http://onsemi.com 5 package dimensions isolated to220 full pack case 221c02 issue c notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. lead dimensions uncontrolled within dimension z. y b t q p a k h z g l f d 3 pl m b m 0.25 (0.010) y e n s j r c seating plane dim min max min max millimeters inches a 0.680 0.700 17.28 17.78 b 0.388 0.408 9.86 10.36 c 0.175 0.195 4.45 4.95 d 0.025 0.040 0.64 1.01 e 0.340 0.355 8.64 9.01 f 0.140 0.150 3.56 3.81 g 0.100 bsc 2.54 bsc h 0.110 0.155 2.80 3.93 j 0.018 0.028 0.46 0.71 k 0.500 0.550 12.70 13.97 l 0.045 0.070 1.15 1.77 n 0.049 1.25 p 0.270 0.290 6.86 7.36 q 0.480 0.500 12.20 12.70 r 0.090 0.120 2.29 3.04 s 0.105 0.115 2.67 2.92 z 0.070 0.090 1.78 2.28 123 style 3: pin 1. mt 1 2. mt 2 3. gate
mac229a8fp, mac229a10fp http://onsemi.com 6 notes
mac229a8fp, mac229a10fp http://onsemi.com 7 notes
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